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| Infrared Emitting Diodes(GaAs) K DNH OESI EL325 DIMENSIONS The EL325 is a GaAs IRED mounted in a low profile clear epoxy package.This IRED is both compact and easy to mount. (Unit : mm) FEATURES UUltra compact ULow profile U nap in mount is possible S (c) APPLICATIONS U hotointerrupters P UOptical equipment MAXIMUM RATINGS Item Reverse voltage Forward current Power dissipation *1 Pulse forward current Operating temp. Storage temp. *2 Soldering temp. (Ta=2...) 5 Symbol VR F I PD F IP Topr. Tstg. Tsol. Rating 5 50 100 0.5 5 85 2 0 85 3 260 Unit V mA mW A ... ... ... *1. pulse width tw Z100 *I sec.period 10msec. T= *2. For MAX.5 seconds at the position of 2 mm from the package ELECTRO-OPTICAL CHARACTERISTICS Item Forward voltage Reverse current Peak emission wavelength Spectral bandwidth Radiant intensity *3 Half angle (Ta=2...) 5 Symbol VF R I *Ip **I PO **E Conditions F= I 50mA VR=5V F I= 5 0 m A F= I 50mA F I= 5 0 m A Min. Typ. 940 50 0.7 ae 0 5 Max. 1.6 10 Unit. V *I A nm nm mW/sr deg. *3. Measured by tester of KODENSHI CORP. - 1- Infrared Emitting Diodes(GaAs) EL325 Power dissipation Vs. Ambient temperature Radiant intensity Vs. Forward current Relative radiant intensity Vs. Ambient temperature Relative intensity Vs. Wavelength Forward current vs. Forward voltage Radiant Pattern Relative radiant intensity Vs. Distance - 2- |
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